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| 2MBI300N-120-01 1200V / 300A 2 in one-package Features * VCE(sat) classified for easy parallel connection * High speed switching * Voltage drive * Low inductance module structure IGBT Module Applications * Inverter for Motor drive * AC and DC Servo drive amplifier * Uninterruptible power supply * Industrial machines, such as Welding machines Equivalent Circuit Schematic C2E1 Maximum ratings and characteristics Absolute maximum ratings (at Tc=25C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector Continuous current 1ms 1ms Max. power dissipation Operating temperature Storage temperature Isolation voltage Screw torque Symbol VCES Unit Rating V 1200 V VGES 20 A IC 300 A IC pulse 600 A -IC 300 A -IC pulse 600 W PC 2100 C Tj +150 C Tstg -40 to +125 V Vis AC 2500 (1min.) N*m Mounting *1 3.5 N*m Terminals *2 4.5 C1 E2 G1 E1 G2 Current control circuit E2 VCE(sat) classification Rank F A B C D E Lenge 2.25 to 2.50V 2.40 to 2.65V 2.55 to 2.80V 2.70 to 2.95V 2.85 to 3.10V 3.00 to 3.30V Conditions Ic = 300A VGE = 15V Tj = 25C *1 : Recommendable value : 2.5 to 3.5N*m (M5) or (M6) *2 : Recommendable value : 3.5 to 4.5N*m (M6) Electrical characteristics (at Tj=25C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Turn-on time Turn-off time Diode forward on voltage Reverse recovery time Symbol ICES IGES VGE(th) VCE(sat) Cies Coes Cres ton tr toff tf VF trr Characteristics Min. Typ. - - 4.5 - - - - - - - - - - - - - - 48000 17400 15480 - 0.25 - 0.35 - - Max. 3.0 45 7.5 3.3 - - - 1.2 0.6 1.5 0.5 3.0 0.35 Conditions VGE=0V, VCE=1200V VCE=0V, VGE=20V VCE=20V, IC=300mA VGE=15V, IC=300A VGE=0V VCE=10V f=1MHz VCC=600V IC=300A VGE=15V RG=2.7ohm IF=300A, VGE=0V IF=300A Unit mA A V V pF s V s Thermal resistance characteristics Item Symbol Rth(j-c) Rth(j-c) Rth(c-f)* Characteristics Min. Typ. - - - - - 0.0167 Conditions Max. 0.06 0.15 - IGBT Diode the base to cooling fin C/W C/W C/W Unit Thermal resistance * : This is the value which is defined mounting on the additional cooling fin with thermal compound 2MBI300N-120-01 Characteristics (Representative) Collector current vs. Collector-Emitter voltage Tj=25C 700 700 IGBT Module Collector current vs. Collector-Emitter voltage Tj=125C 600 600 500 Collector current : Ic [A] Collector current : Ic [A] 0 1 2 3 4 5 500 400 400 300 300 200 200 100 100 0 Collector-Emitter voltage : VCE [V] 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector-Emitter vs. Gate-Emitter voltage Tj=25C Collector-Emitter vs. Gate-Emitter voltage Tj=125C 10 10 Collector-Emitter voltage : VCE [V] 8 Collector-Emitter voltage : VCE [V] 0 5 10 15 20 25 8 6 6 4 4 2 2 0 Gate-Emitter voltage : VGE [V] 0 0 5 10 15 20 25 Gate-Emitter voltage : VGE [V] Switching time vs. Collector current Vcc=600V, RG=2.7 ohm, VGE=15V, Tj=25C Switching time vs. Collector current Vcc=600V, RG=2.7 ohm, VGE=15V, Tj=125C 1000 Switching time : ton, tr, toff, tf [n sec.] Switching time : ton, tr, toff, tf [n sec.] 0 100 200 300 400 500 600 1000 100 100 10 Collector current : Ic [A] 10 0 100 200 300 400 Collector current : Ic [A] 500 600 2MBI300N-120-01 IGBT Module Switching time vs. RG Vcc=600V, Ic=300A, VGE=15V, Tj=25C 1000 Dynamic input characteristics Tj=25C 25 800 Switching time : ton, tr, toff, tf [n sec.] Collector-Emitter voltage : VCE [V] 20 600 15 400 10 200 5 100 0 1 Gate resistance : RG [ohm] 10 0 500 1000 1500 2000 2500 3000 3500 Gate charge : Qg [nC] 0 4000 Forward current vs. Forward voltage VGE=0V 500 700 Reverse recovery characteristics trr, Irr, vs. IF 600 Reverse recovery current : Irr [A] Reverse recovery time : trr [n sec.] 500 Forward current : IF [A] 400 300 200 100 100 0 0 1 2 3 4 5 0 100 200 300 400 500 600 Forward voltage : VF [V] Forward current : IF [A] Transient thermal resistance 3000 Reversed biased safe operating area +VGE=15V, -VGE < 15V, Tj < 125C, RG > 2.7 ohm = = = 2500 Thermal resistance : Rth (j-c) [C/W] 0.1 Collector current : Ic [A] 2000 1500 0.01 1000 500 0.001 0.001 0 0.01 0.1 1 0 200 400 600 800 1000 1200 Pulse width : PW [sec.] Collector-Emitter voltage : VCE [V] Gate-Emitter voltage : VGE [V] 1000 2MBI300N-120-01 IGBT Module Switching loss vs. Collector current Vcc=600V, RG=2.7 ohm, VGE=15V 125 100 Switching loss : Eon, Eoff, Err [mJ/cycle] 100 Capacitance : Cies, Coes, Cres [nF] Capacitance vs. Collector-Emitter voltage Tj=25C 75 10 50 25 1 0 0 100 200 300 400 500 600 0 5 10 15 20 25 30 35 Collector current : Ic [A] Collector-Emitter voltage : VCE [V] Outline Drawings, mm |
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